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Preliminary
SM2G50US60
FEATURES
' High Speed Switching ' Low Conduction Loss : VCE(sat) = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100&
IGBT MODULE
APPLICATIONS
' ' ' ' '
Package code : 7-PM-AA
G2 E2 C2E1 E2 C1 E1 G1
General Purpose Inverters Welding Machine Induction Heating UPS , CVCF Robotics , Servo Controls
Internal Circuit Diagram
ABSOLUTE MAXIMUM RATINGS (Tc = 25)
Symbol VCES VGES IC ICM (1) IF IFM PC Tj Tstg Viso
Characteristics
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ Tc = 25& Pulsed Collector Current Diode Continuous Forward Current @ Tc = 25& Diode Maximum Forward Current Maximum Power Dissipation @Tc = 25& Operating Junction Temperature Storage Temperature Range Isolation Voltage @ AC 1 min Mounting Torque @ Power terminals screw :M5 Mounting screw :M5
Rating
Units V V A A A A
20
50 100 50 100 250 -40 ~ 150 -40 ~ 125 2500 2.0 2.0
600
& &
V N.m N.m
W
Notes: (1) Repetitive Rating : Pulse width Limited by Max.Junction Temperature
Rev.B
(c)1999 Fairchild Semiconductor Corporation
Preliminary
SM2G50US60
ELECTRICAL CHARACTERISTICS (IGBT PART)
(Tc=25,Unless Otherwise Specified) Symbol
BVCES
IGBT MODULE
Characteristics
C - E Breakdown Voltage Temperature Coeff. of Breakdown Voltage G - E threshold voltage Collector cutoff Current G - E leakage Current Collector to Emitter saturation voltage
Test Conditions
VGE = 0V , IC = 250 VGE = 0V , IC = 1mA
Min
600 -
Typ Max
0.6 -
Units
V V/
ZV ZT
CES/
J
VGE(th) ICES IGES VCE(sat)
IC =50mA , VCE = VGE VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Ic=50A, VGE = 15V @Tc= 25 Ic=50A, VGE = 15V @Tc=100 VGE = 0V , f = 1( VCE = 30V
5 -
6 2.1 2.7 4200 400 120 90 65 184 80 1.5 0.9 2.4 -
8.5 250 100 2.7 250 4.8 -
V uA nA V V pF pF pF ns ns ns ns mJ mJ mJ uS
Cies Coes Cres td(on) tr td(off) tf Eon Eoff Ets Tsc
Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Turn on rise time Turn off delay time Turn off fall time Turn on Switching Loss Turn off Switching Loss Total Switching Loss Short Circuit withstand Time
VCC = 300V , IC = 50A VGE = 15V RG = 13
-
n
Inductive Load
Vcc = 300V, VGE = 15V @Tc = 100
10
Qg Qge Qgc
Total Gate Charge Gate-Emitter Charge Gate-Collector Charge
Vcc = 300V VGE = 15V Ic = 50A
-
220 50 90
330 -
nC nC nC
Preliminary
SM2G50US60
ELECTRICAL CHARACTERISTICS (DIODE PART)
(Tc=25,Unless Otherwise Specified) Symbol
VFM
IGBT MODULE
Characteristics
Diode Forward Voltage
Test Conditions
IF=50A Tc =25 Tc =100
Min Min Typ
1.9 1.8 90 130 5 7 225 455
Max Units
2.8 130 6.5 422 nC A nS V
Trr
Diode Reverse Recovery Time
IF=50A, VR=200V Tc =25 di/dt= -100A/uS Tc =100 Tc =25 Tc =100 Tc =25 Tc =100
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
THERMAL RESISTANCE
Symbol
R~JC R~JC R~CS Weight
Characteristics
Junction-to-Case(IGBT Part, Per 1/2 Module) Junction-to-Case(DIODE Part, Per 1/2 Module) Case-to-Sink ( Conductive grease applied) Weight of Module
Typ
-
Max
0.5 1.0 0.15 190
Units
/W /W /W /W
Preliminary
SM2G50US60
160 20V 15V 13V
IGBT MODULE
160 20V 15V
13V
COLLECTOR CURRENT IC [A]
12V
COLLECTOR CURRENT IC [A]
120
120
12V
80
11V
80
11V
VGE = 10V 40
VGE = 10V 40
Common Emitter Tc = 25 0 0 2 4 6 8 10
Common Emitter Tc = 125 0 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE [V]
COLLECTOR-EMITTER VOLTAGE VCE [V]
160 Common Emitter Vge = 15V
160 Common Emitter Vce = 5V
120 Tc = 25
120
125
COLLECTOR CURRENT IC [A]
COLLECTOR CURRENT IC [A]
Tc = 25 80
125
80
40
40
0 0 1 2 3 4 5
0 0 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE VCE [V]
GATE-EMITTER VOLTAGE VGE [V]
Preliminary
SM2G50US60
16 Common Emitter Tc = 25 16 Common Emitter Tc = 125
IGBT MODULE
COLLECTOR-EMITTER VOLTAGE V CE [V]
12
COLLECTOR-EMITTER VOLTAGE V CE [V]
12
8
8
100 4 Ic = 20 A 50
100 4 Ic = 20 A 50
0 0 4 8 12 16 20
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE [V]
GATE-EMITTER VOLTAGE VGE [V]
1 Tc = 25 1 0.5 0.5 Tc = 25
Thermal Response [Zthjc] [/W]
0.2 0.1 0.1 0.05
IGBT Stage
Thermal Response [Zthjc] [/W]
0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse
DIODE Stage
0.02 0.01 0.01
single pulse
1E-3 10
-5
1E-3 10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
Preliminary
SM2G50US60
160 Common Cathode Vge = 0V
IGBT MODULE
10000
Cies
120
FORWARD CURRENT I F [A]
Tc = 25
125
CAPACITANCE C [pF]
80
1000 Coes
40
Common Emitter Vge = 0V f = 1Mhz Tc = 25
0 0 1 2 3 4
Cres
100 1 10 30
FORWARD VOLTAGE VF [V]
COLLECTOR-EMITTER VOLTAGE VCE [V]
400 Common Emitter RL = 6+ Tc =25
16
4.0 Vcc = 300V Rg = 13+ Tc = 125
14
3.5
Esw
COLLECTOR-EMITTER VOLTAGE V CE [V)
GATE-EMITTER VOLTAGE V GE [V]
300
12
3.0
10
2.5
ENERGY [mJ]
200
8
2.0 Eoff 1.5 Eon 1.0
6
100
4
2
0.5
0 0 50 100 150 200
0
0.0 0 10 20 30 40 50
CHARGE QG [nC]
COLLECTOR - EMITTER CURRENT IC [A]
Preliminary
SM2G50US60
5 Vcc = 300V Ic = 50A Esw 4 Vcc = 300V Rg = 13+ Vge = 15V
IGBT MODULE
IC = 50A
4 3
ENERGY [mJ]
ENERGY [mJ]
3
Eon
2
2 Eoff
20A 1 1
5A 0 0 20 40 60 80 0
GATE - EMITTER RESISTANCE Rg [
+]
100
20
40
60
80
100
CASE TEMPERATURE TC [ ]
120
20 Common Cathode di/dt = -100A/
0.5 COMMON EMITTER Vcc = 300V Vge = 15V Rg = 13+
PEAK REVERSE RECOVERY CURRENT Irr [A] REVERSE RECOVERY TIME Trr [x10ns]
Trr
10 Irr
SWITCHING TIME td(off) , tf [ ]
td(off)
5
0.1
tf
2 0 10 20 30 40
: Tc = 25 : Tc = 125& 50
&
0.05 10
: Tc = 25& : Tc = 125& 50 100
FORWARD CURRENT IF [A]
COLLECTOR CURRENT Ic [A]
Preliminary
SM2G50US60
0.1 Common Emitter Vcc = 300V Vge = 15V Rg =13+ 0.9 Common Emitter Vcc = 300V Vge = 15V Ic = 50A
IGBT MODULE
td(off)
SWITCHING TIME td(on) , tr [ ]
td(on)
SWITCHING TIME td(off) , tf [ ]
tf 0.1
tr
: Tc = 25 : Tc = 125 0.01 10 50 100 0.05 10
: Tc = 25 : Tc = 125
& &
COLLECTOR CURRENT IC (A)
GATE RESISTANCE RG [
+]
100
0.5 Common Emitter Vcc = 300V Vge = 15V Ic = 50A
300
td(on) Ic MAX. (Pulsed) 100 50 tr
COLLECTOR CURRENT IC [A]
SWITCHING TIME td(on) , tr [ ]
Ic MAX. (Continuos) 100 30 1ms
0.1
10
DC Operation
3
0.01 10
: Tc = 25 : Tc = 125
& &
1
GATE RESISTANCE RG [
+]
100
0.3
1
3
10
30
100
300
1000
COLLECTOR-EMITTER VOLTAGE VCE [V]
Preliminary
SM2G50US60
200 Tj 125& Vge = 15V Rg = 13+
IGBT MODULE
L
[A]
150
Vcc
COLLECTOR CURRENT I
C
Rg +/- 15V
100
90% Vge 10%
50
Vce 90% Ic 10% Td(off) Tf Td(on) Tr
0 0 100 200 300 400 500 600 700
COLLECTOR-EMITTER VOLTAGE VCE [V]
Inductive Load Test Circuit and Waveforms
7-PM-AA
* (

( *

= 0RXQWLQJ+ROH
0 '3

7$3 7(50,1$/ W
1$0( 3/$7(
0D[
Unit : mm
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEXTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANAR TM MICROWIRETM POPTM PowerTrenchTM QSTM QuietSeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can be systems which, (a) are intended for surgical implant reasonably expected to cause the failure of the life support into the body, or (b) support or sustain life, or (c) whose device or system, or to affect its safety or effectiveness. failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
LIFE SUPPORT POLICY Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later data. Fairchild Semiconductor reserves the right to make changes at any time without notices in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production

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